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Si7810DN
Vishay Siliconix
TYPICAL CHARACTERISTICS T A = 25°C, unless otherwise noted
0.6
0.4
0.2
I D = 250 μA
50
40
0.0
30
- 0.2
- 0.4
20
- 0.6
- 0.8
- 1.0
10
- 1.2
- 50
- 25
0
25 50 75
100
125
150
0
0.01
0.1
1
10
100
600
T J - Temperature (°C)
Threshold Voltage
Time (s)
Single Pulse Power, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
P DM
t 1
t 2
0.02
Single Pulse
t 1
1. Duty Cycle, D =
t 2
2. Per Unit Base = R thJA = 65 °C/W
3. T JM - T A = P DM Z thJA(t)
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?70689 .
www.vishay.com
4
Document Number: 70689
S-81544-Rev. C, 07-Jul-08
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